位置：STH10N80K5-2AG > STH10N80K5-2AG详情
STH10N80K5-2AG中文资料
STH10N80K5-2AG数据手册规格书PDF详情
Features
• AEC-Q101 qualified
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100 avalanche tested
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.
更新时间：2025-10-6 10:07:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
STMicroelectronics |
21+ |
H2Pak-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
STMicroelectronics |
24+ |
原厂原装 |
5850 |
原装正品 现货库存价格优势! |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
||||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
||||
ST |
16+ |
TO-3P |
10000 |
全新原装现货 |
|||
ST |
06+ |
TO-247 |
2000 |
原装 |
|||
24+ |
N/A |
3560 |
|||||
ST |
24+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
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