位置:首页 > IC中文资料 > STH10NC60FI

型号 功能描述 生产厂家 企业 LOGO 操作
STH10NC60FI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STH10NC60FI

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

更新时间:2026-8-4 10:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMTEC/砷泰
2550+
4580
只做原装正品现货或订货假一赔十!
XP Power
25+
N/A
12000
一级代理保证进口原装正品假一罚十价格合理
Norsat
24+
模块
400
ST
25+
SSOP
20000
原装,请咨询
SAMTEL
25+23+
0
13303
绝对原装正品全新进口深圳现货
26+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
HITACHI
25+
SMD
9868
专做原装正品,假一罚百!
台产
25+
QFP48
15000
一级代理原装现货
ST
22+
TO
6000
十年配单,只做原装
HITACHI/日立
2022+
91900
全新原装 货期两周

STH10NC60FI数据表相关新闻