型号 功能描述 生产厂家 企业 LOGO 操作
STH10NC60FI

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

STH10NC60FI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

更新时间:2026-3-16 9:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
TO
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Norsat
24+
模块
400
ST/意法
2023+
SOT-263
6895
原厂全新正品旗舰店优势现货
ST
2022+
TO-263
2500
只做原装,可提供样品
ST/意法半导体
2020+
H2PAK-2
7600
只做原装正品,卖元器件不赚钱交个朋友
ST/意法半导体
24+
H2PAK-2
6000
全新原装深圳仓库现货有单必成
ST/意法半导体
25+
H2PAK-2
20000
现货
STMICROELECTRONICS
1407
410
优势货源原装正品
ST/意法
24+
NA
14280
强势渠道订货 7-10天
ST
22+
TO-263
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

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