30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 60A 220W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

30 A - 1200 V - short circuit rugged IGBT

文件：359.23 Kbytes Page：13 Pages

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

1200V, 30A Trench IGBT

文件：614.76 Kbytes Page：9 Pages

1200V, 30A Trench IGBT

文件：614.76 Kbytes Page：9 Pages

Discrete IGBT (High-Speed V series) 1200V / 30A

文件：559.44 Kbytes Page：6 Pages