600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 20A 65W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT

文件：410.77 Kbytes Page：17 Pages

600 V - 10 A - very fast IGBT

文件：774.03 Kbytes Page：19 Pages

N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT

文件：453.39 Kbytes Page：15 Pages

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT

文件：453.39 Kbytes Page：15 Pages

N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT

文件：410.77 Kbytes Page：17 Pages

N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

文件：599.36 Kbytes Page：17 Pages

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件：526.13 Kbytes Page：17 Pages