丝印代码：GP10NC60HD；600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

超快“H”系列

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. • Low on-voltage drop (VCE(sat)) \n• Very soft ultra fast recovery antiparallel diode \n• Low CRES / CIES ratio (no cross-conduction susceptibility);

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 20A 65W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT

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N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT

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600 V - 10 A - very fast IGBT

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N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.