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STW10NC60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STW10NC60

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半导体

STW10NC60产品属性

  • 类型

    描述

  • 型号

    STW10NC60

  • 制造商

    STMicroelectronics

  • 功能描述

    MOSFET N TO-247

更新时间:2026-8-4 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
ST
15+
TO-247
11560
全新原装,现货库存,长期供应
ST
2024+
TO-247
50000
原装现货
ST
24+
TO-3P
1000
原装现货热卖
ST
05+
原厂原装
50051
只做全新原装真实现货供应
ST
24+
2000
本站现库存
SEOUL
24+
LED
24000
郑重承诺只做原装进口现货
ST
26+
TO-247
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
22+
TO-247
6000
十年配单,只做原装
鑫远鹏
25+
NA
5000
价优秒回原装现货

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