STGP10NB60S价格

参考价格:¥5.4137

型号:STGP10NB60S 品牌:STMICROELECTRONICS 备注:这里有STGP10NB60S多少钱,2026年最近7天走势,今日出价,今日竞价,STGP10NB60S批发/采购报价,STGP10NB60S行情走势销售排行榜,STGP10NB60S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STGP10NB60S

N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow erMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequenc

STMICROELECTRONICS

意法半导体

STGP10NB60S

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

STGP10NB60S

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 29A 80W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

STGP10NB60S

16 A、600 V低压降IGBT

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220FP PowerMesh??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220FP PowerMesh??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow erMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequenc

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

16 A、600 V低压降IGBT,带柔软、恢复速度极快的二极管

STMICROELECTRONICS

意法半导体

封装/外壳:TO-220-3 整包 包装:管件 描述:IGBT 600V 23A 25W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT

文件:273.61 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

STGP10NB60S产品属性

  • 类型

    描述

  • 型号

    STGP10NB60S

  • 功能描述

    IGBT 晶体管 N-Ch 600 Volt 10 Amp

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-1-2 16:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
TO220F
21574
郑重承诺只做原装进口现货
ST
25+
SOT23-5
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
ST/意法半导体
23+
N/A
20000
ST
24+
TO-220-3
976
ST/意法半导体
21+
TO-220-3
8860
只做原装,质量保证
ST
19+
TO220
20000
445
ST
NEW
TO-220
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST/意法半导体
25+
TO-220-3
6000
原厂原装 欢迎询价
ST/意法
2025+
TO220F
5000
原装进口,免费送样品!
ST/意法半导体
25+
原厂封装
10280

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