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STGP10NB60SD价格
参考价格：￥12.2712
型号：STGP10NB60SD 品牌：STMicroelectronics 备注：这里有STGP10NB60SD多少钱，2025年最近7天走势，今日出价，今日竞价，STGP10NB60SD批发/采购报价，STGP10NB60SD行情走势销售排行榜，STGP10NB60SD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STGP10NB60SD | N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a | STMICROELECTRONICS 意法半导体 |   | |
STGP10NB60SD | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 29A 80W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL 10A - 600V - TO-220FP PowerMesh??IGBT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT 文件：387.24 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT 文件：273.61 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT 文件：387.24 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT 文件：387.24 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
STGP10NB60SD产品属性
- 类型
描述
- 型号
STGP10NB60SD
- 功能描述
IGBT 晶体管 N-Ch 600 V 10 A Low Drop PowerMESH
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
963 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
1926+ |
TO-220AB |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST |
24+ |
TO-220 |
25000 |
ST专营品牌全新原装热卖 |
|||
ST/意法 |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST |
2020+ |
TO-220 |
3300 |
全新原装现货,一片也是批量价。 |
|||
ST/意法半导体 |
23+ |
N/A |
20000 |
STGP10NB60SD规格书下载地址
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2020-12-1
DdatasheetPDF页码索引
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