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STGP10NB37LZ价格
参考价格：￥19.4021
型号：STGP10NB37LZ 品牌：STMicroelectronics 备注：这里有STGP10NB37LZ多少钱，2026年最近7天走势，今日出价，今日竞价，STGP10NB37LZ批发/采购报价，STGP10NB37LZ行情走势销售排行榜，STGP10NB37LZ报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGP10NB37LZ | N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh??IGBT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitt | STMICROELECTRONICS 意法半导体 |   | |
STGP10NB37LZ | 丝印代码：GP10NB37LZ；10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | |
STGP10NB37LZ | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 440V 20A 125W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
STGP10NB37LZ | N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh™ IGBT | STMICROELECTRONICS 意法半导体 | | |
10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | ||
10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：GB10NB37LZ；10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitt | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT 文件：445.81 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | |
STGP10NB37LZ产品属性
- 类型
描述
- 型号
STGP10NB37LZ
- 功能描述
IGBT 晶体管 N-Ch Clamped 20 Amp
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST/意法半导体 |
2020+ |
TO-220-3 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
|||
ST/意法半导体 |
25 |
TO-220-3 |
6000 |
原装正品 |
|||
ST/意法 |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
|||
STMICRO |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
|||
STMICRO |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
24+ |
TO-220-3 |
1454 |
||||
ST |
24+ |
TO220 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ST |
24+ |
TO220 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
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2020-12-1
DdatasheetPDF页码索引
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