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STGB10NB37LZ价格
参考价格：￥6.1123
型号：STGB10NB37LZ 品牌：STMicroelectronics 备注：这里有STGB10NB37LZ多少钱，2025年最近7天走势，今日出价，今日竞价，STGB10NB37LZ批发/采购报价，STGB10NB37LZ行情走势销售排行榜，STGB10NB37LZ报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STGB10NB37LZ | N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitt | STMICROELECTRONICS 意法半导体 |   | |
STGB10NB37LZ | 10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | |
STGB10NB37LZ | N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT 文件：445.81 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | |
10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | ||
10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT 文件：445.81 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 440V 20A 125W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | ||
10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | | ||
10 A - 410 V internally clamped IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat | STMICROELECTRONICS 意法半导体 | |
STGB10NB37LZ产品属性
- 类型
描述
- 型号
STGB10NB37LZ
- 功能描述
IGBT 晶体管 10 A 410V INTERNALLY CLAMPED IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
D2PAK |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
24+ |
NA/ |
3588 |
原厂直销,现货供应,账期支持! |
|||
ST |
2016+ |
TO263 |
13782 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
18+;17+ |
SOT-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
ST |
24+ |
TO263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ST |
1926+ |
D2PAK |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法半导体 |
25+ |
TO263 |
13782 |
全新原装正品支持含税 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
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STGB10NB37LZ规格书下载地址
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STGB10NB37LZ数据表相关新闻
STGD5H60DF
进口代理
2023-4-24STF202-22T1G
STF202-22T1G
2023-4-20STGD10NC60KDT4
全新原装现货 支持第三方机构验证
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原装正品现货
2022-5-7STF40NF20 ST/意法 21+ TO-220F
https://hfx03.114ic.com/
2022-2-17
DdatasheetPDF页码索引
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