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STGF7NC60HD价格
参考价格：￥4.6279
型号：STGF7NC60HD 品牌：STMicroelectronics 备注：这里有STGF7NC60HD多少钱，2026年最近7天走势，今日出价，今日竞价，STGF7NC60HD批发/采购报价，STGF7NC60HD行情走势销售排行榜，STGF7NC60HD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGF7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 |   | |
STGF7NC60HD | N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | |
STGF7NC60HD | 封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：IGBT 600V 10A 25W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
STGF7NC60HD | N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode | STMICROELECTRONICS 意法半导体 | | |
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel PowerMESH™ 600 V, 14 A very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features Low on-vo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 | |
STGF7NC60HD产品属性
- 类型
描述
- 型号
STGF7NC60HD
- 功能描述
IGBT 晶体管 N-Ch 600 Volt 7 Amp
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
25+23+ |
TO-220F |
27239 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ST/意法 |
2025+ |
TO-220FP |
3150 |
原装进口价格优 请找坤融电子! |
|||
ST |
1932+ |
TO-220F |
7379 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
2517+ |
TO-220F |
8850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
26+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST |
24+ |
TO220ISOFULLPACK |
8866 |
||||
ST/意法 |
24+ |
TO-220F |
9600 |
原装现货,优势供应,支持实单! |
|||
ST |
1716+ |
TO220F |
7500 |
只做原装进口,假一罚十 |
|||
ST(意法) |
25+ |
TO-220F(TO-220IS) |
500000 |
源自原厂成本,高价回收工厂呆滞 |
STGF7NC60HD规格书下载地址
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2020-12-1
DdatasheetPDF页码索引
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