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STGB7NC60HD价格
参考价格：￥4.9771
型号：STGB7NC60HDT4 品牌：STMicroelectronics 备注：这里有STGB7NC60HD多少钱，2026年最近7天走势，今日出价，今日竞价，STGB7NC60HD批发/采购报价，STGB7NC60HD行情走势销售排行榜，STGB7NC60HD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGB7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 |   | |
STGB7NC60HD | N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | |
STGB7NC60HD | N沟道14 A、600 V超快IGBT，带超高速二极管 | STMICROELECTRONICS 意法半导体 | | |
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 | | ||
600 V, 14 A very fast IGBT | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel PowerMESH™ 600 V, 14 A very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features Low on-vo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | |
STGB7NC60HD产品属性
- 类型
描述
- 型号
STGB7NC60HD
- 制造商
STMicroelectronics
- 功能描述
Transistor IGBT N-Ch 600V 25A D2PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
D2PAK-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法 |
23+ |
D2PAK |
50000 |
全新原装正品现货,支持订货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
23+ |
D2PAK-3 |
12700 |
买原装认准中赛美 |
|||
ST/意法半导体 |
24+ |
D2PAK-3 |
16900 |
原装现货,实单价优 |
|||
ST |
22+ |
D2PAK |
9000 |
原厂渠道,现货配单 |
|||
ST/意法半导体 |
26+ |
D2PAK-3 |
60000 |
只有原装 可配单 |
|||
ST |
11+PBF |
D2PAK |
96000 |
现货 |
|||
ST |
24+ |
TO-263 |
7500 |
||||
ST/意法半导体 |
25+ |
D2PAK-3 |
10000 |
原装公司现货 |
STGB7NC60HD芯片相关品牌
STGB7NC60HD规格书下载地址
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STGB7NC60HD数据表相关新闻
STGD5H60DF
进口代理
2023-4-24STF202-22T1G
STF202-22T1G
2023-4-20STGD10NC60KDT4
全新原装现货 支持第三方机构验证
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2022-6-23STGD5H60DF
原装正品现货
2022-5-7STF40NF20 ST/意法 21+ TO-220F
https://hfx03.114ic.com/
2022-2-17
DdatasheetPDF页码索引
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