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STGB7NC60HD价格
参考价格：￥4.9771
型号：STGB7NC60HDT4 品牌：STMicroelectronics 备注：这里有STGB7NC60HD多少钱，2026年最近7天走势，今日出价，今日竞价，STGB7NC60HD批发/采购报价，STGB7NC60HD行情走势销售排行榜，STGB7NC60HD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGB7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 |   | |
STGB7NC60HD | N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | |
STGB7NC60HD | N沟道14 A、600 V超快IGBT，带超高速二极管 | STMICROELECTRONICS 意法半导体 | | |
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 | | ||
600 V, 14 A very fast IGBT | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel PowerMESH™ 600 V, 14 A very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features Low on-vo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | |
STGB7NC60HD产品属性
- 类型
描述
- 型号
STGB7NC60HD
- 制造商
STMicroelectronics
- 功能描述
Transistor IGBT N-Ch 600V 25A D2PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST全系列 |
25+23+ |
TO-263 |
26454 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
ST/意法半导体 |
2020+ |
D2PAK-3 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
|||
ST |
11+ |
TO-263 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ST/意法半导体 |
24+ |
D2PAK-3 |
20000 |
现货 |
|||
ST/意法 |
24+ |
TO-263 |
60000 |
全新原装现货 |
|||
ST |
24+ |
TO-263 |
7500 |
||||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268831邹小姐 |
STGB7NC60HD芯片相关品牌
STGB7NC60HD规格书下载地址
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STGB7NC60HD数据表相关新闻
STGD5H60DF
进口代理
2023-4-24STF202-22T1G
STF202-22T1G
2023-4-20STGD10NC60KDT4
全新原装现货 支持第三方机构验证
2022-6-24STFW4N150
全新原装现货 支持第三方机构验证
2022-6-23STGD5H60DF
原装正品现货
2022-5-7STF40NF20 ST/意法 21+ TO-220F
https://hfx03.114ic.com/
2022-2-17
DdatasheetPDF页码索引
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