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STGB7NC60HD价格
参考价格：￥4.9771
型号：STGB7NC60HDT4 品牌：STMicroelectronics 备注：这里有STGB7NC60HD多少钱，2025年最近7天走势，今日出价，今日竞价，STGB7NC60HD批发/采购报价，STGB7NC60HD行情走势销售排行榜，STGB7NC60HD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STGB7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 |   | |
STGB7NC60HD | N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | |
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel PowerMESH™ 600 V, 14 A very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features Low on-vo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | |
STGB7NC60HD产品属性
- 类型
描述
- 型号
STGB7NC60HD
- 制造商
STMicroelectronics
- 功能描述
Transistor IGBT N-Ch 600V 25A D2PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
2020+ |
D2PAK-3 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
|||
ST/意法 |
24+ |
TO-263 |
60000 |
全新原装现货 |
|||
ST/意法半导体 |
24+ |
D2PAK-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST/意法 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ST/意法 |
22+ |
D2PAK |
20271 |
||||
ST |
18+ |
TO-263 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ST |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST/意法 |
24+ |
NA/ |
16249 |
原厂直销,现货供应,账期支持! |
|||
ST |
11+PBF |
D2PAK |
96000 |
现货 |
STGB7NC60HD规格书下载地址
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STGB7NC60HD数据表相关新闻
STGD5H60DF
进口代理
2023-4-24STF202-22T1G
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https://hfx03.114ic.com/
2022-2-17
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