Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：983.16 Kbytes Page：16 Pages

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRENCH GATE FIELD-STOP IGBT, M S 分立半导体产品 晶体管 - UGBT、MOSFET - 单

650 V、4 A沟槽栅场截止低损耗M系列IGBT

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.16759 Mbytes Page：18 Pages

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.09091 Mbytes Page：19 Pages