Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

650 V、4 A沟槽栅场截止低损耗M系列IGBT

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.09091 Mbytes Page：19 Pages

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.16759 Mbytes Page：18 Pages

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：983.16 Kbytes Page：16 Pages