型号 功能描述 生产厂家&企业 LOGO 操作
STGD7NB60M

N-CHANNEL7A-600VTO-220/DPAKPowerMESH™IGBT

nHIGHINPUTIMPEDANCE nLOWON-VOLTAGEDROP(Vcesat) nOFFLOSSESINCLUDETAILCURRENT nLOWGATECHARGE nHIGHCURRENTCAPABILITY nHIGHFREQUENCYOPERATION nCO-PACKAGEDWITHTURBOSWITCH™ ANTIPARALLELDIODE DESCRIPTION Usingthelatesthighvoltagetechnologybasedona patentedstr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL7A-600VTO-220/DPAKPowerMESH™IGBT

nHIGHINPUTIMPEDANCE nLOWON-VOLTAGEDROP(Vcesat) nOFFLOSSESINCLUDETAILCURRENT nLOWGATECHARGE nHIGHCURRENTCAPABILITY nHIGHFREQUENCYOPERATION nCO-PACKAGEDWITHTURBOSWITCH™ ANTIPARALLELDIODE DESCRIPTION Usingthelatesthighvoltagetechnologybasedona patentedstr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL7A-600V-T0-220/DPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances.ThesuffixFidentifiesafamilyoptimizedtoachieveverylowswitchingswitchingtimesfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

文件:341.97 Kbytes Page:15 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

文件:341.97 Kbytes Page:15 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL7A-600V-TO-220FPPowerMESHTMIGBT

文件:257.57 Kbytes Page:9 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STGD7NB60M产品属性

  • 类型

    描述

  • 型号

    STGD7NB60M

  • 功能描述

    IGBT 晶体管 N-Ch 600 Volt 7 Amp

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-6-6 11:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
22+
TO-252
30000
原装正品
ST
23+
TO252DPAK
35628
全新原装真实库存含13点增值税票!
ST
2019
TO-252-2
55000
原装正品现货假一赔十
ST
2020+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ST
1926+
DPAK
6852
只做原装正品现货!或订货假一赔十!
ST/意法
TO-252-2
265209
假一罚十,原包原标签,常备现货
ST/意法
22+
TO252DPAK
16547
终端免费提供样品 可开13%增值税发票
ADI
23+
TO-252-2
8000
只做原装现货
ST/意法
23+
TO-252-2
50000
全新原装正品现货,支持订货
ST
2023+
TO-252
700000
柒号芯城跟原厂的距离只有0.07公分

STGD7NB60M芯片相关品牌

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  • SLPOWER
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