EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 420V 30A 150W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

汽车级390 V内部钳制IGBT ESCIS 180 mJ

EAS 180 mJ - 400 V - internally clamped IGBT

文件：636.58 Kbytes Page：18 Pages

EAS 180 mJ - 390 V - internally clamped IGBT

文件：896 Kbytes Page：19 Pages

EAS 180 mJ - 390 V - internally clamped IGBT

文件：896 Kbytes Page：19 Pages