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STGB18N40LZT4中文资料
STGB18N40LZT4数据手册规格书PDF详情
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
Features
■ AEC Q101 compliant
■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
■ ESD gate-emitter protection
■ Gate-collector high voltage clamping
■ Logic level gate drive
■ Low saturation voltage
■ High pulsed current capability
■ Gate and gate-emitter resistor
Application
■ Pencil coil electronic ignition driver
STGB18N40LZT4产品属性
- 类型
描述
- 型号
STGB18N40LZT4
- 功能描述
IGBT 晶体管 EAS 180 mJ-400 V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICROELECTRONICS |
24+ |
NA |
21000 |
原装现货,专业配单专家 |
|||
STMICROELECTRONICS |
21+ |
标准封装 |
100 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
|||
STMICROELECTRONICS |
22+ |
N/A |
2500 |
进口原装,优势现货 |
|||
STMICROELECTRONICS |
2023+ |
SMD |
3882 |
安罗世纪电子只做原装正品货 |
|||
STMICROELECTRONICS |
937 |
||||||
STMICROELECTRONICS |
2322 |
con |
933 |
现货常备产品原装可到京北通宇商城查价格 |
|||
STMicroelectronics |
24+ |
NA |
3539 |
进口原装正品优势供应 |
|||
ST(意法半导体) |
24+ |
TO-263 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
|||
ST/意法 |
25+ |
TO-263 |
32000 |
ST/意法全新特价STGB18N40LZT4即刻询购立享优惠#长期有货 |
STGB18N40LZT4 价格
参考价格：￥5.1488
STGB18N40LZT4 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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