位置：首页 > IC中文资料第155页 > STD30NE06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD30NE06 | N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature | VBSEMI 微碧半导体 | | ||
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：898.96 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET 文件：47.69 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | |
STD30NE06产品属性
- 类型
描述
- 型号
STD30NE06
- 功能描述
MOSFET N-CH 60V 30A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
20+ |
SOT252 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+ |
TO-252 |
1096 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
24+ |
SOT-252 |
25000 |
ST专营品牌全新原装热卖 |
|||
ST |
25+ |
TO-252 |
20000 |
原装，请咨询 |
|||
ST |
23+ |
NA |
2274 |
专做原装正品,假一罚百! |
|||
ST |
26+ |
TO-252 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
STD30NE06L |
25+ |
1108 |
1108 |
||||
ST |
25+ |
TO-252 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
STD30NE06规格书下载地址
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