型号 功能描述 生产厂家 企业 LOGO 操作
STP30NE06LFP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) =0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP30NE06LFP

N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics a

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.025 ohm - 30A TO-252

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET

文件:47.69 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

STP30NE06LFP产品属性

  • 类型

    描述

  • 型号

    STP30NE06LFP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

更新时间:2025-9-24 14:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+23+
TO-220F
26120
绝对原装正品全新进口深圳现货
ST
23+
原盒原包装
33000
全新原装假一赔十
STM
24+/25+
TO-220AB
116000
原装正品现货库存价优
STM
2018+
26976
代理原装现货/特价热卖!
ST
24+
TO-220F
15000
原装现货热卖
ST/意法
21+
TO-220
227000
绝对公司现货,不止网上数量!原装正品,假一赔十!
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST
24+
N/A
1560
ST
TO-220F
22+
6000
十年配单,只做原装

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