DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.025 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100 °C

■ APPLICATION ORIENTED

CHARACTERIZATION

■ FOR TAPE & REEL AND OTHER

PACKAGING OPTIONS CONTACT SALES

OFFICES