位置：首页 > IC中文资料第155页 > STD30NE06L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD30NE06L | N - CHANNEL 60V - 0.025 ohm - 30A TO-252 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 |   | |
STD30NE06L | N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | |
STD30NE06L | N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature | VBSEMI 微碧半导体 | | ||
N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET 文件：47.69 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | |
STD30NE06L产品属性
- 类型
描述
- 型号
STD30NE06L
- 功能描述
MOSFET N-Ch 60 Volt 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
STD30NE06L |
25+ |
1108 |
1108 |
||||
ST |
17+ |
TO-252 |
6200 |
||||
ST |
24+ |
TO252DPAK |
8866 |
||||
ST |
24+ |
SOT-252 |
25000 |
ST专营品牌全新原装热卖 |
|||
ST |
20+ |
TO252DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
1236+;12+ |
TO-252 |
312 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
NEW |
TO-252 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
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