Circuit Protection Solutions Low Voltage Fuse Links Catalogue

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熔断器/电流保护器

NPN Silicon Transistor

Description • Medium power amplifier application Features • PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

NPN Silicon Transistor

Description • Medium power amplifier application Features • PC(Collector power dissipation)=1W (Ceramic substate of 250 ㎟ ×0.8t used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficienc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 0.260 Ω typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™ strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa

N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

N - CHANNEL 60V - 0.07 ohm - 16A - TO-251 STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N - CHANNEL 100V - 0.07ohm - 16A - IPAK/DPAK STripFET MOSFET

DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable m

N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telec

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.235Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

晶闸管-二极管模块

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

晶闸管-二极管模块

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

Thyristor-Diode Modules

文件：368.48 Kbytes Page：4 Pages

NPN Silicon Transistor

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Extremely low gate charge

文件：453.02 Kbytes Page：16 Pages

Extremely low gate charge

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N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D짼PAK, DPAK

文件：1.37238 Mbytes Page：19 Pages

isc N-Channel Mosfet Transistor

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N-Channel 60 V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

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N-Channel 60V - 0.060廓 - 16A - DPAK STripFET??II Power MOSFET

文件：705.24 Kbytes Page：11 Pages

N-channel 60V - 0.060廓 - 24A - DPAK/IPAK STripFET??II Power MOSFET

文件：362.6 Kbytes Page：14 Pages

N-channel 60V - 0.060廓 - 24A - DPAK/IPAK STripFET??II Power MOSFET

文件：362.6 Kbytes Page：14 Pages

N-channel 60V - 0.060廓 - 24A - DPAK/IPAK STripFET??II Power MOSFET

文件：362.6 Kbytes Page：14 Pages

N-Channel 60 V (D-S) MOSFET

文件：963.86 Kbytes Page：7 Pages

N-channel 60V - 0.060廓 - 24A - DPAK/IPAK STripFET??II Power MOSFET

文件：362.6 Kbytes Page：14 Pages

N-Channel 6 0-V (D-S) MOSFET

文件：897.36 Kbytes Page：6 Pages

N-Channel 60V - 0.060廓 - 16A - DPAK STripFET??II Power MOSFET

文件：705.24 Kbytes Page：11 Pages