位置：首页 > IC中文资料第109页 > STD16NE06L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STD16NE06L | N-CHANNEL60V-0.07ohm-16A-DPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
N-CHANNEL60V-0.07ohm-16ADPAK/IPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL60V-0.07ohm-16A-TO-251STripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-Channel60V(D-S)MOSFET 文件：963.88 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel60V(D-S)MOSFET 文件：1.00642 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STD16NE06L产品属性
- 类型
描述
- 型号
STD16NE06L
- 功能描述
MOSFET N-Ch 60 Volt 16 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-252 |
8795 |
||||
ST/ |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
ST全系列 |
25+23+ |
TO-252DPA |
25927 |
绝对原装正品全新进口深圳现货 |
|||
ST |
2025+ |
DPAK-2 |
32560 |
原装优势绝对有货 |
|||
24+ |
N/A |
1500 |
|||||
ST |
17+ |
TO-251 |
6200 |
||||
STM |
23+ |
NA |
1425 |
专做原装正品,假一罚百! |
|||
ST |
23+ |
SOT-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ST |
2018+ |
TO252 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
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STD16NE06L规格书下载地址
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