位置：首页 > IC中文资料第109页 > STD16NE06L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD16NE06L | N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 |   | |
STD16NE06L | N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™ strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.07 ohm - 16A - TO-251 STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：963.88 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00642 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c | STMICROELECTRONICS 意法半导体 | |
STD16NE06L产品属性
- 类型
描述
- 型号
STD16NE06L
- 功能描述
MOSFET N-Ch 60 Volt 16 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
17+ |
TO-251 |
6200 |
||||
ST |
TO-252 |
22+ |
10000 |
终端免费提供样品 可开13%增值税发票 |
|||
ST/意法 |
24+ |
NA/ |
3550 |
原厂直销,现货供应,账期支持! |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ST |
13+ |
TO-252 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STM |
23+ |
NA |
1425 |
专做原装正品,假一罚百! |
|||
ST |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ST全系列 |
25+23+ |
TO-252DPA |
25927 |
绝对原装正品全新进口深圳现货 |
|||
ST |
25+ |
SOT-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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