位置：首页 > IC中文资料第109页 > STD16NE06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD16NE06 | N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™ strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa | STMICROELECTRONICS 意法半导体 |   | |
STD16NE06 | N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.07 ohm - 16A - TO-251 STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：963.88 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00642 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c | STMICROELECTRONICS 意法半导体 | |
STD16NE06产品属性
- 类型
描述
- 型号
STD16NE06
- 功能描述
MOSFET N-Ch 60 Volt 16 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/ |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
ST |
2511 |
TO-252 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
NEW |
TO-252 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
25+ |
TO-252 |
16900 |
原装，请咨询 |
|||
ST/意法 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ST |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
23+ |
TO-252DPAK |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2024+ |
TO-252 |
50000 |
原装现货 |
|||
ST |
24+ |
TO-252 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST |
06+ |
?TO-252 |
1000 |
全新原装 绝对有货 |
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