N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

N沟道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

丝印代码：DPAK；isc N-Channel Mosfet Transistor

文件：308.12 Kbytes Page：2 Pages

N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D짼PAK, DPAK

文件：1.37238 Mbytes Page：19 Pages

N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D짼PAK, DPAK

文件：1.37238 Mbytes Page：19 Pages