DESCRIPTION

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.07 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ AVALANCHERUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ APPLICATION ORIENTED CHARACTERIZATION

■ THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

■ DC MOTOR CONTROL (DISK DRIVERS,etc.)

■ DC-DC & DC-ACCONVERTERS

■ SYNCHRONOUS RECTIFICATION