Epoxy Coated Steel Enclosures

• Earth Studs Included • IP66 to EN 60529 • Top & Bottom Gland Plates • Fixing Brackets Available (STBRACKET) • Galvanised Back Plate Included • Epoxy Powder Coated RAL7035 • Body and door manufactured in 1.2 - 1.5mm sheet steel • Gland plate manufactured in 2.0 - 2.5mm sheet steel • Not r

Epoxy Coated Steel Enclosures

• Earth Studs Included • IP66 to EN 60529 • Top & Bottom Gland Plates • Fixing Brackets Available (STBRACKET) • Galvanised Back Plate Included • Epoxy Powder Coated RAL7035 • Body and door manufactured in 1.2 - 1.5mm sheet steel • Gland plate manufactured in 2.0 - 2.5mm sheet steel • Not r

Epoxy Coated Steel Enclosures

• Earth Studs Included • IP66 to EN 60529 • Top & Bottom Gland Plates • Fixing Brackets Available (STBRACKET) • Galvanised Back Plate Included • Epoxy Powder Coated RAL7035 • Body and door manufactured in 1.2 - 1.5mm sheet steel • Gland plate manufactured in 2.0 - 2.5mm sheet steel • Not r

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

N-Channel Power MOSFET

Application « Motor control and drives « Load switch « Power management « PWM Application

N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N-CHANNEL 40V - 0.0036 W - 100A D2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-Channel 40 V (D-S) MOSFET

FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see

AEC-Q101 qualified

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

Description The STB100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved. General features ■ RDS(ON) * Qg industry’s benchmark ■ Conduction losses

N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

Description The STB100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved. General features ■ RDS(ON) * Qg industry’s benchmark ■ Conduction losses

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

PNP Silicon Transistor

Features • Low saturation switching application • Power amplifier • High Voltage : VCEO=-80V Min. • Complement to STD1408PI

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Terminals finish: 100% Pure Tin  Trench MOS Schottky technology  This is a Pb − Fre

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a D²PAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.46 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD ■ THROUGH-HOLE I2PAK (

N - CHANNEL 200V - 0.30ohm - 10A - D2PAK PowerMESH] MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronis has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per ar

N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Isc N-Channel MOSFET Transistor

文件：315.65 Kbytes Page：2 Pages

N-channel 100 V, 0.0068 廓 typ., 80 A, STripFET??VII DeepGATE??Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220

文件：1.6682 Mbytes Page：23 Pages

N沟道100 V、0.0068 Ohm典型值、80 A STripFET F7功率MOSFET，D2PAK封装

N沟道60 V、4.7 mOhm典型值、100 A STripFET F7功率MOSFET，D2PAK封装

N-channel 60 V, 4.7 m??typ.,100 A STripFET??F7 Power MOSFET in a D짼PAK package

文件：555.77 Kbytes Page：15 Pages

Isc N-Channel MOSFET Transistor

文件：294.5 Kbytes Page：2 Pages

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes Page：15 Pages

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes Page：15 Pages

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes Page：15 Pages

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes Page：15 Pages

N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

文件：394.68 Kbytes Page：17 Pages

N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

文件：394.68 Kbytes Page：17 Pages

N-Channel 40 V (D-S) MOSFET

文件：1.07767 Mbytes Page：9 Pages

N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

SCHOTTKY RECTIFIER

文件：166.22 Kbytes Page：8 Pages

SCHOTTKY RECTIFIER

文件：199.21 Kbytes Page：8 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE ARRAY SCHOTTKY 100V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY RECTIFIER

文件：152.93 Kbytes Page：7 Pages

SCHOTTKY RECTIFIER

文件：146.92 Kbytes Page：6 Pages

SCHOTTKY RECTIFIER

文件：152.93 Kbytes Page：7 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 150V D2PAK 分立半导体产品 二极管 - 整流器 - 单

SCHOTTKY RECTIFIER

文件：147.25 Kbytes Page：6 Pages