位置：首页 > IC中文资料第104页 > STB100NH02L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB100NH02L | N-CHANNEL24V-0.0052ohm-60AD2PAKSTripFETTMIIIPOWERMOSFET Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
N-CHANNEL24V-0.0052ohm-60AD2PAKSTripFETTMIIIPOWERMOSFET Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL24V-0.0052ohm-60AD2PAKSTripFETTMIIIPOWERMOSFET Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel24V-0.0042ohm-60A-DPAK-IPAKSTripFETTMIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesredu | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel24V-0.0042ohm-60A-DPAK-IPAKSTripFETTMIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesredu | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel24V-0.0042-60A-DPAK-IPAKSTripFETIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesredu | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STB100NH02L产品属性
- 类型
描述
- 型号
STB100NH02L
- 功能描述
MOSFET N-Ch 24 Volt 60 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
D2PAK |
98651 |
||||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
24+ |
NA/ |
206074 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
STM |
24+ |
SOT-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
23+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
17+ |
TO-263 |
6200 |
||||
ST |
23+ |
TO263 |
12000 |
原装正品,假一罚十 |
|||
ST |
2447 |
SOT-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
09+ |
TO-263 |
953 |
原装现货 |
STB100NH02L芯片相关品牌
STB100NH02L规格书下载地址
STB100NH02L参数引脚图相关
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- STB5100
- STB458D
- STB4410
- STB4395
- STB434S
- STB432S
- STB416D
- STB3015
- STB2060
- STB205L
- STB2045
- STB1560
- STB1306
- STB1277
- STB1188
- STB1132
- STB1106200MZF
- STB11061R2MZF
- STB1106150MZF
- STB1106101MZF
- STB1106100MZF
- STB1106
- STB10NK60ZT4
- STB10NK60Z-1
- STB10NK60Z_08
- STB10NK60Z_06
- STB10NK60Z
- STB10NB50T4
- STB10N65K3
- STB1082
- STB1081TF4G
- STB1081SL3G
- STB1081L3
- STB1060
- STB1045
- STB101-0.525-31
- STB101-0.473-31
- STB101-0.421-34
- STB100NH02LT4
- STB100NF04T4
- STB100NF04L-1
- STB100NF04L
- STB100NF04-1
- STB100NF04_07
- STB100NF04
- STB100NF03L-03T4
- STB100NF03L-03-1
- STB100NF03L-03-01
- STB100NF03L-03_06
- STB100NF03L-03
- STB-10
- STB09-6-6
- STB09-5-5
- STB09-3-3
- STB09-2-2
- STB09-1-1
- STB09-0-0
- STB0899-NIM
- STB0899-EVAL
- STB0899
- STB0210
- STAS2
- STAR250
- STAC6-Q
- STAC6-C
- STABP01
- STA92N
- STA821M
- STA820M
- STA8121
- STA811M
- STA810M
- STA8058
- STA802M
- STA801M
- STA801
- STA7360
- STA733N
- STA733
STB100NH02L数据表相关新闻
STB12NM50ND
STB12NM50ND
2023-8-2STA50613TR
STA50613TR
2023-4-18STB13NM60N
热卖-原装正品现货
2022-8-11STB20N90K5 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STB20N90K5 类别分立半导体产品晶体管-FET，MOSFET-单个 制造商STMicroelectronics 包装：1000 封装：TO-263-3
2021-9-18STA516BETR音频IC现货供应
STA516BETR音频IC现货供应
2019-12-5STA500-30V的3.5A的四边形电力半桥
最小输入输出的脉冲宽度失真200mW的互补的DMOS导通电阻输出级CMOS兼容的逻辑输入热保护热报警输出过压，欠压保护描述STA500是单片四桥的一半Multipower阶段BCD工艺。该设备可以用作双桥或重新配置，通过连接的CONFIG引脚VDD引脚，与目前的单桥双能力，并作为半桥半（二进制模式）...电流能力。该装置是格外旨在使输出阶段一立体声全数字高效率（DDX的™）放大器可提供30W的输出功率30+在8W的负载和60瓦的8W的负载在桥梁BTL配
2013-2-6
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
