DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.0026 Ω

■ LOW THRESHOLD DRIVE

■ 100 AVALANCHE TESTED

■ LOGIC LEVEL DEVICE

■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1)

■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ SOLENOID AND RELAY DRIVERS