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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 30A TO252-3 | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 30A DPAK | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor 文件：321.15 Kbytes Page：2 Pages | ISC 无锡固电 | |
SPD30N03S2产品属性
- 类型
描述
- 型号
SPD30N03S2
- 功能描述
MOSFET N-CH 30V 30A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
40040 |
INFINEON/英飞凌全新特价SPD30N03S2L-20G即刻询购立享优惠#长期有货 |
|||
INFINEON |
25+ |
TO-2632L(D2PAK) |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
INFINEON |
23+ |
TO-252 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
INFINEON |
23+ |
TO252 |
8000 |
只做原装现货 |
|||
INFINEON/英飞凌 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
24190 |
原装正品代理渠道价格优势 |
|||
INFINEON |
23+ |
SOT252 |
12800 |
公司只有原装 欢迎来电咨询。 |
SPD30N03S2规格书下载地址
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2019-6-18
DdatasheetPDF页码索引
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