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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 30A TO252-3 | Infineon 英飞凌 | | ||
MOSFET N-CH 30V 30A DPAK | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor 文件：321.15 Kbytes Page：2 Pages | ISC 无锡固电 | |
SPD30N03S2产品属性
- 类型
描述
- 型号
SPD30N03S2
- 功能描述
MOSFET N-CH 30V 30A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
40040 |
INFINEON/英飞凌全新特价SPD30N03S2L-20G即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
|||
INENOI |
20+ |
SOT252 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON/英飞凌 |
25+ |
PBF |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
21+ |
TO-252 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
10000 |
只做原厂渠道 可追溯货源 |
SPD30N03S2芯片相关品牌
SPD30N03S2规格书下载地址
SPD30N03S2参数引脚图相关
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深圳市天芯半导体科技有限公司 0755-82725660 18128853661（微信75056055） QQ：177691499
2019-6-18
DdatasheetPDF页码索引
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