| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD30N03 | SIPMOS횘 Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature | INFINEON 英飞凌 |   | |
SPD30N03 | SIPMOSÒ Power Transistor | INFINEON 英飞凌 | | |
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | | ||
N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | INFINEON 英飞凌 | | ||
OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | INFINEON 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | INFINEON 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | INFINEON 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant | INFINEON 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
MOSFET N-CH 30V 30A TO252-3 | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages | INFINEON 英飞凌 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package. | SAMHOP 三合微科 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | | ||
SIPMOS Power Transistor 文件：560.56 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor 文件：560.56 Kbytes Page：14 Pages | INFINEON 英飞凌 | |
SPD30N03产品属性
- 类型
描述
- 技术：
MOSFET（金属氧化物）
- 漏源电压（Vdss）：
30V
- 电流 - 连续漏极（Id）（25°C 时）：
30A（Tc）
- 驱动电压（最大 Rds On，最小 Rds On）：
4.5V，10V
- 不同 Id，Vgs 时的 Rds On（最大值）：
6.7 毫欧 @ 30A，10V
- 不同 Id 时的 Vgs（th）（最大值）：
2V @ 85µA
- 不同 Vgs 时的栅极电荷 （Qg）（最大值）：
68nC @ 10V
- Vgs（最大值）：
±20V
- 不同 Vds 时的输入电容（Ciss）（最大值）：
2530pF @ 25V
- 功率耗散（最大值）：
136W（Tc）
- 工作温度：
-55°C ~ 175°C（TJ）
- 安装类型：
表面贴装
- 供应商器件封装：
PG-TO252-3
- 封装/外壳：
TO-252-3，DPak（2 引线 + 接片），SC-63
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
24+ |
TO-252-2 |
9860 |
全新原装现货/假一罚百! |
|||
INFINEON |
2016+ |
TO-252 |
6877 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON |
25+23+ |
TO-252 |
43300 |
绝对原装正品全新进口深圳现货 |
|||
80 |
252 |
INFINEON/英飞凌 |
5 |
92 |
|||
INFINEON/英飞凌 |
2406+ |
PBF |
71260 |
诚信经营!进口原装!量大价优! |
|||
INFINEON |
22+ |
SOT-252 |
108888 |
原装现货库存.价格优势 |
|||
INFINEON |
25+ |
TO252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
INFINEON |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
Infineon |
26+ |
模块 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
INF |
23+ |
TO-252 |
10000 |
原装正品,假一罚十 |
SPD30N03芯片相关品牌
SPD30N03规格书下载地址
SPD30N03参数引脚图相关
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SPD30N03数据表相关新闻
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属性 参数值 商品目录 压接端子 触头材料 磷青铜 触头镀层 锡 线规 - AWG 24~30 镀层厚度 - 线规 - mm2 0.05~0.22 产品类型 压线端子 认证 RoHS
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保证最优惠的价格，薄利多销为经营理念;_ 服务:最快捷的交货方式，货品均有30天质量保证
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Molex SpeedMezz 连接器系列提供了薄型、小尺寸和灵活设计的夹层解决方案
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深圳市天芯半导体科技有限公司 0755-82725660 18128853661（微信75056055） QQ：177691499
2019-6-18
DdatasheetPDF页码索引
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