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型号	功能描述	生产厂家企业	LOGO
SPD30N03	SIPMOS횘 Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature	Infineon 英飞凌	Infineon
SPD30N03	SIPMOSÒ Power Transistor	Infineon 英飞凌	Infineon
SPD30N03L	SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature	SIEMENS 西门子	SIEMENS
SPD30N03S2L	N-Channel MOSFET Transistor • DESCRITION • Superior thermal resistance • FEATURES • Static drain-source on-resistance: RDS(on)≤10mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation	ISC 无锡固电	ISC
SPD30N03S2L07	OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant	Infineon 英飞凌	Infineon
SPD30N03S2L-07	OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant	Infineon 英飞凌	Infineon
SPD30N03S2L-07	N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC	VBSEMI 微碧半导体	VBSEMI
SPD30N03S2L-07	OptiMOSa Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant	Infineon 英飞凌	Infineon
SPD30N03S2L07T	N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC	VBSEMI 微碧半导体	VBSEMI
SPD30N03S2L-08	N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC	VBSEMI 微碧半导体	VBSEMI
SPD30N03S2L-10	N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC	VBSEMI 微碧半导体	VBSEMI
SPD30N03S2L-10	OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant	Infineon 英飞凌	Infineon
SPD30N03S2L-10G	OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant	Infineon 英飞凌	Infineon
SPD30N03S2L-10G	N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC	VBSEMI 微碧半导体	VBSEMI
SPD30N03S2L-20	N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC	VBSEMI 微碧半导体	VBSEMI
SPD30N03S2L-20	OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant	Infineon 英飞凌	Infineon
SPD30N03S2L-20G	N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC	VBSEMI 微碧半导体	VBSEMI
SPD30N03S2L-07	OptiMOS Power-Transistor	Infineon 英飞凌	Infineon
SPD30N03S2L-07	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
SPD30N03S2L-07_08	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
SPD30N03S2L-07G	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 文件：658.42 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
SPD30N03S2L07GBTMA1	MOSFET N-CH 30V 30A TO252-3	Infineon 英飞凌	Infineon
SPD30N03S2L-10	OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
SPD30N03S2L-10_08	OptiMOS Power-Transistor Feature N-Channel Enhancement mode 文件：637.45 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
SPD30N03S2L-20	OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
SPD30N03S2L-20_08	OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
SPD30N03S2L-20G	OptiMOS Power-Transistor Feature Enhancement mode Logic Level 文件：687.74 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
30N03A	30V N-Channel Power Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances	UMW 友台半导体	UMW
30N03A	30V N-Channel Power General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on	EVVOSEMI 翊欧	EVVOSEMI
30N03	N-Channel 30-V (D-S) MOSFET 文件：1.01839 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
30N03B	30A竊?0V N-CHANNEL MOSFET 文件：235.42 Kbytes Page：5 Pages	KIA 可易亚半导体	KIA
A30N03A	N-Channel 30-V (D-S) MOSFET 文件：1.0152 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI

SPD30N03产品属性

类型
描述
型号
SPD30N03
制造商
INFINEON
制造商全称
Infineon Technologies AG
功能描述
SIPMOS Power Transistor

SPD30N03供应商更多...

更新时间：2025-11-5 17:48:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市润联芯城科技有限公司	SPD30N03S2L-20	INFINEON/英飞凌	22+	TO-252	12500	原装正品支持实单	询价
深圳市威雅利发展有限公司	SPD30N03S2L-20G	VBsemi	21+	TO252	10065	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市正纳电子有限公司	SPD30N03S2L-20	Infineon(英飞凌)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市诺美思科技有限公司	SPD30N03S2L-20G	Infineon		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市星宇佳科技有限公司	SPD30N03S2L-10MOS(场效应管)	80	252	INFINEON/英飞凌	5	92	询价
深圳市科恒伟业电子有限公司	SPD30N03S2L-10G	INFINEON/英飞凌	2450+	TO-252	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市明嘉莱科技有限公司	SPD30N03S2L-20	INFINEON/英飞凌	25+	PBF	880000	明嘉莱只做原装正品现货	询价
深圳市凯睿晟科技有限公司	SPD30N03S2L-20	INFINEON/英飞凌	21+	TO-252	30000	优势供应实单必成可13点增值税	询价
深圳市华斯顿科技有限公司	SPD30N03S2L-10G	INFINEON	25+23+	TO-252	43300	绝对原装正品全新进口深圳现货	询价
深圳市拓亿芯电子有限公司	SPD30N03S2L-10	Infineon	23+	TO252-2	30000	代理全新原装现货,价格优势	询价

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SPD30N03规格书下载地址

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属性参数值商品目录压接端子触头材料磷青铜触头镀层锡线规 - AWG 24~30 镀层厚度 - 线规 - mm2 0.05~0.22 产品类型压线端子认证 RoHS
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2019-6-18

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SPD30N03产品属性

SPD30N03供应商更多...

SPD30N03芯片相关品牌

SPD30N03规格书下载地址

SPD30N03参数引脚图相关

SPD30N03数据表相关新闻

SPD127R-105M

SPC574K72E5C6FAR

SPH-002T-P0.5S

SPC7011F-C6-TE3 原装现货假一赔十热卖中

SpeedMezz连接器系列1733000106

SPD30P06PG天芯科技优势渠道积累-货源稳定-价格优势

DdatasheetPDF页码索引