Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

High Power Factor LED Replacement T8 Fluorescent Tube

Introduction This application note describes the principles and design equations required for the design of a high brightness LED lamp using the AL9910. The equations are then used to demonstrate the design of a universal, offline, high power factor (PF), 13W LED lamp suitable for use as the re

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Cool MOS Power Transistor

文件：489.98 Kbytes Page：13 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS Power Transistor

文件：489.98 Kbytes Page：13 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS Power Transistor

文件：353.32 Kbytes Page：10 Pages

Cool MOS??Power Transistor

文件：251.72 Kbytes Page：10 Pages

AL9910EV4 Evaluation board connection diagram

文件：227.05 Kbytes Page：8 Pages

PWM high-efficiency LED driver control IC.

文件：254.2 Kbytes Page：12 Pages

PWM high-efficiency LED driver control IC

文件：226.97 Kbytes Page：8 Pages

Cool MOS Power Transistor

文件：353.32 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel 650 V (D-S) MOSFET

文件：2.52205 Mbytes Page：8 Pages

IGBT with integrated diode in packages offering space saving advantage

文件：1.72801 Mbytes Page：16 Pages

Power MOSFET

文件：193.74 Kbytes Page：3 Pages

N-CHANNEL SILICON POWER MOSFETFeatures

文件：580.87 Kbytes Page：5 Pages