Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

High Power Factor LED Replacement T8 Fluorescent Tube

Introduction This application note describes the principles and design equations required for the design of a high brightness LED lamp using the AL9910. The equations are then used to demonstrate the design of a universal, offline, high power factor (PF), 13W LED lamp suitable for use as the re

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

500V-900V CoolMOS™ N-Channel Power MOSFET

PWM high-efficiency LED driver control IC

文件：226.97 Kbytes Page：8 Pages

AL9910EV4 Evaluation board connection diagram

文件：227.05 Kbytes Page：8 Pages

PWM high-efficiency LED driver control IC.

文件：254.2 Kbytes Page：12 Pages

Cool MOS??Power Transistor

文件：251.72 Kbytes Page：10 Pages

Cool MOS Power Transistor

文件：353.32 Kbytes Page：10 Pages

Cool MOS Power Transistor

文件：353.32 Kbytes Page：10 Pages

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perf

N-Channel 650 V (D-S) MOSFET

文件：2.54815 Mbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.51693 Mbytes Page：8 Pages