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SPB03N60C3价格
参考价格：￥3.6892
型号：SPB03N60C3 品牌：INFINEON 备注：这里有SPB03N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPB03N60C3批发/采购报价，SPB03N60C3行情走势销售排行榜，SPB03N60C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB03N60C3 | Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 |   | |
SPB03N60C3 | Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | |
SPB03N60C3 | N-Channel 650V (D-S) Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | |
SPB03N60C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPB03N60C3 | Cool MOS Power Transistor 文件：489.98 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
Cool MOS Power Transistor 文件：489.98 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：3.20783 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：599.57 Kbytes Page：14 Pages | Infineon 英飞凌 | |
SPB03N60C3产品属性
- 类型
描述
- 型号
SPB03N60C3
- 功能描述
MOSFET COOL MOS N-CH 650V 3.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3480 |
原厂直销,现货供应,账期支持! |
|||
INFINEON |
2016+ |
SOT-263 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/英飞凌 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON |
1004+ |
TO-263 |
970 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
23+24 |
TO-263 |
29580 |
原装正品.原盘原标,提供BOM一站式配单 |
|||
INF |
11+ |
TO-263 |
8994 |
||||
INF |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
英飞菱 |
TO-263 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
SPB03N60C3规格书下载地址
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2012-11-10
DdatasheetPDF页码索引
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