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R601价格

参考价格：￥181.7881

型号：R6010 品牌：BRADY CORP 备注：这里有R601多少钱，2025年最近7天走势，今日出价，今日竞价，R601批发/采购报价，R601行情走势销售排行榜，R601报价。

型号	功能描述	生产厂家企业	LOGO
R601	General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Features: □ Standard and Reverse Polarities with Color Coded Seals □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Glazed Ceramic Seal Gives High Voltage	POWEREX	POWEREX
R601002	Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 2m Product Description Two meter, Cat 6 IP20 ruggedized metal-body RJ45 cord set, unshielded with solid conductors (Belden cable 7940A)	BELDEN 百通	BELDEN
R601003	Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 3m Product Description Three meter, Cat 6 IP20 ruggedized metal-body RJ45 cord set, unshielded with solid conductors (Belden cable 7940A)	BELDEN 百通	BELDEN
R601005	Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 5m Product Description Five meter, Cat 6 IP20 ruggedized metal-body RJ45 cord set, unshielded with solid conductors (Belden cable 7940A)	BELDEN 百通	BELDEN
R6010ANX	10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
R6010ANX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.56Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6010MND3	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6011END3	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6011END3	Nch 600V 11A Power MOSFET Features 1) Low on-resistance 2) Low radiation noise 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant Application Switching	ROHM 罗姆	ROHM
R6011KND3	Nch 600V 11A Power MOSFET Features 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant Application Switching	ROHM 罗姆	ROHM
R6011KND3	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6012ANJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.42Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6012ANJ	10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy Applications Switching Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
R6012ANJTL	N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light	VBSEMI 微碧半导体	VBSEMI
R6012ANX	10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply	ROHM 罗姆	ROHM
R6012ANX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.42Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6012FNX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.51Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6012FNX	10V Drive Nch MOSFET Features 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 7) Pb-free lead plating ; RoHS compliant Application Switching Power Supply	ROHM 罗姆	ROHM
R6012JNJ	Nch 600V 12A Power MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications	ROHM 罗姆	ROHM
R6012JNJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6012JNX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6012JNX	Nch 600V 12A Power MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications	ROHM 罗姆	ROHM
R6013VND3	Nch 600V 250mohm(typ.) Power MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant 6) Halogen free mold compound Application Switching applications	ROHM 罗姆	ROHM
R6013VNX	Nch 600V 250mohm(typ.) Power MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant 6) Halogen free mold compound Application Switching applications	ROHM 罗姆	ROHM
R6014YND3	Nch 600V 14A Power MOSFET Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Pb-free lead plating ; RoHS compliant 5) Halogen free mold compound Application Switching applications	ROHM 罗姆	ROHM
R6014YNX	Nch 600V 215mohm(typ.) Power MOSFET Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Pb-free plating ; RoHS compliant 5) Halogen free mold compound Application Switching applications	ROHM 罗姆	ROHM
R6014YNX3	Nch 600V 215mohm(typ.) Power MOSFET Features 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant 5) Halogen free mold compound Application Switching applications	ROHM 罗姆	ROHM
R6015ANJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6015ANJ	10V Drive Nch MOSFET Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching	ROHM 罗姆	ROHM
R6015ANX	10V Drive Nch MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant	ROHM 罗姆	ROHM
R6015ANX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6015ANZ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6015ANZ	10V Drive Nch MOSFET Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Application Switching	ROHM 罗姆	ROHM
R6015FNJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6015FNX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6015FNX	10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply	ROHM 罗姆	ROHM
R6015FNX	N-Channel 650-V (D-S) Super Junction MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light	VBSEMI 微碧半导体	VBSEMI
R6018ANJ	10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply	ROHM 罗姆	ROHM
R6018ANJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6018ANX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6018ANX	10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply	ROHM 罗姆	ROHM
R6018JNJ	Nch 600V 18A Power MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications	ROHM 罗姆	ROHM
R6018JNJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.29Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6018JNX	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.29Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
R6018VNX	Nch 600V 170mohm(typ.) Power MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant 6) Halogen free mold compound Application Switching applications	ROHM 罗姆	ROHM
R6010	包装：散装描述：R6000 HALOGEN FREE RIBBON 75' BK 计算机设备配件	ETC 知名厂家	ETC
R6010-00	包装：散装描述：BRD SPT SNAP FIT/LOCK NYL 10.5MM 五金件，紧固件，配件电路板支座	ETC 知名厂家	ETC
R6010-00	PLASTIC SPACER SELF LOCKING 文件：135.82 Kbytes Page：1 Pages	HARWIN	HARWIN
R601001	Cord Sets, DataTuff짰 Cat 6 IP20 Metal-Body RJ45 Cord Set, 1m 文件：235.55 Kbytes Page：1 Pages	BELDEN 百通	BELDEN
R60100-1	Class RK5 600Vac, 70 to 600A Dual-Element, Time-Delay Fuses 文件：289.61 Kbytes Page：2 Pages	COOPER	COOPER
R60100-2	Class RK5 600Vac, 70 to 600A Dual-Element, Time-Delay Fuses 文件：289.61 Kbytes Page：2 Pages	COOPER	COOPER
R60100-3	Class RK5 600Vac, 70 to 600A Dual-Element, Time-Delay Fuses 文件：289.61 Kbytes Page：2 Pages	COOPER	COOPER
R6010230XXYA	R6010230XXYA,Discrete Rectifiers,300 Amperes, 200 Volts,General Purpose / Fast Recovery,Main Applications for General Purpose Rectifiers - battery chargers, induction heating/melting, motor controls, power supplies, transportation, weldingMain Ap	POWEREX	POWEREX
R6010430XXYA	R6010430XXYA,Discrete Rectifiers,300 Amperes, 400 Volts,General Purpose / Fast Recovery,Main Applications for General Purpose Rectifiers - battery chargers, induction heating/melting, motor controls, power supplies, transportation, weldingMain Ap	POWEREX	POWEREX
R6010625XXYA	R6010625XXYA,Discrete Rectifiers,250 Amperes, 600 Volts,General Purpose / Fast Recovery,Main Applications for General Purpose Rectifiers - battery chargers, induction heating/melting, motor controls, power supplies, transportation, weldingMain Ap	POWEREX	POWEREX
R6010MND3	Nch 600V 10A Power MOSFET 文件：2.21932 Mbytes Page：14 Pages	ROHM 罗姆	ROHM
R6010MNX	isc N-Channel MOSFET Transistor 文件：295.77 Kbytes Page：2 Pages	ISC 无锡固电	ISC
R6011	Thermal Transfer Print Ribbons 文件：496.87 Kbytes Page：1 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
R6011ENJ	isc N-Channel MOSFET Transistor 文件：299.45 Kbytes Page：2 Pages	ISC 无锡固电	ISC
R6011ENJ	Nch 600V 11A Power MOSFET 文件：2.49291 Mbytes Page：14 Pages	ROHM 罗姆	ROHM

R601产品属性

类型
描述
型号
R601
制造商
POWEREX
制造商全称
Powerex Power Semiconductors
功能描述
General Purpose Rectifier(200-300 Amperes Average 1400-2600 Volts)

R601供应商更多...

更新时间：2025-10-25 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	R6015ANX	ROHM/罗姆	24+	NA/	16249	原厂直销,现货供应,账期支持!	询价
深圳市高捷芯城科技有限公司	R6015KNXA24C12	ROHM(罗姆)	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市金芯世纪电子有限公司	R6015ANZ	ROHM/罗姆	22+	TO-3P	100000	代理渠道/只做原装/可含税	询价
深圳市粤骏腾电子科技有限公司	R6011ENXC7	ROHM/罗姆	24+	TO220F	98000	原装现货假一罚十	询价
深圳市威雅利发展有限公司	R6018JNJGTL	ROHM	1736	N/A	95	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市恒凯威科技开发有限公司	R6015ENX	ROHM/罗姆	21+	NA	12820	只做原装,质量保证	询价
深圳市正纳电子有限公司	R6011END3TL1	ROHM/罗姆	23+		32078	10年以上分销商,原装进口件,服务型企业	询价
深圳市科恒伟业电子有限公司	R6011END3TL1	ROHM	24+	TO-252	6850	只做原装正品现货或订货假一赔十!	询价
深圳市华斯顿科技有限公司	R6018ANX	ROHM	25+23+	TO220F	10668	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	R6015ANZ	ROHM	22+	TO-3PF	3000	原装正品,支持实单	询价

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R601规格书下载地址

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R601价格

R601产品属性

R601供应商更多...

R601芯片相关品牌

R601规格书下载地址

R601参数引脚图相关

R601数据表相关新闻

R5S72690W266BG 32位微控制器-MCU

R-78B3.3-1.0L

R7F0C009A2DSP-C#AA0

R7F0C01072DNP， R7F0C010B2DFP-C， UPD79F7023，

R5R0C028FA#V0深圳市唯有度科技有限公司

R5S37032AC4A00FT全新原装现货

DdatasheetPDF页码索引