General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts)

Features: □ Standard and Reverse Polarities with Color Coded Seals □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Glazed Ceramic Seal Gives High Voltage

丝印代码：R6011E；Nch 600V 11A Power MOSFET

Features 1) Low on-resistance 2) Low radiation noise 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant Application Switching

丝印代码：R6011K；Nch 600V 11A Power MOSFET

Features 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant Application Switching

丝印代码：R6012JNJ；Nch 600V 12A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications

丝印代码：R6012JNX；Nch 600V 12A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications

丝印代码：R6013VND3；Nch 600V 250mohm(typ.) Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant 6) Halogen free mold compound Application Switching applications

丝印代码：R6013VNX；Nch 600V 250mohm(typ.) Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant 6) Halogen free mold compound Application Switching applications

丝印代码：R6014YND3；Nch 600V 14A Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Pb-free lead plating ; RoHS compliant 5) Halogen free mold compound Application Switching applications

丝印代码：R6014YNX；Nch 600V 215mohm(typ.) Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Pb-free plating ; RoHS compliant 5) Halogen free mold compound Application Switching applications

丝印代码：R6014YNX3；Nch 600V 215mohm(typ.) Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant 5) Halogen free mold compound Application Switching applications

丝印代码：R6018JNJ；Nch 600V 18A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications

丝印代码：R6018VNX；Nch 600V 170mohm(typ.) Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant 6) Halogen free mold compound Application Switching applications

Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 2m

Product Description Two meter, Cat 6 IP20 ruggedized metal-body RJ45 cord set, unshielded with solid conductors (Belden cable 7940A)

Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 3m

Product Description Three meter, Cat 6 IP20 ruggedized metal-body RJ45 cord set, unshielded with solid conductors (Belden cable 7940A)

Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 5m

Product Description Five meter, Cat 6 IP20 ruggedized metal-body RJ45 cord set, unshielded with solid conductors (Belden cable 7940A)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.56Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching Structure Silicon N-channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.42Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

丝印代码：TL；10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy Applications Switching Structure Silicon N-channel MOSFET

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.42Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.51Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

10V Drive Nch MOSFET

Features 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 7) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.39Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

丝印代码：TL；10V Drive Nch MOSFET

Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching

10V Drive Nch MOSFET

1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

10V Drive Nch MOSFET

Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Application Switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

N-Channel 650-V (D-S) Super Junction MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

丝印代码：TL；10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.29Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.29Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

TLS 2200® & TLS PC Link™ Printer Ribbons

文件：239.79 Kbytes Page：1 Pages

包装：散装 描述：R6000 HALOGEN FREE RIBBON 75' BK 计算机设备 配件

包装：散装 描述：BRD SPT SNAP FIT/LOCK NYL 10.5MM 五金件，紧固件，配件 电路板支座

PLASTIC SPACER SELF LOCKING

文件：135.82 Kbytes Page：1 Pages

Cord Sets, DataTuff짰 Cat 6 IP20 Metal-Body RJ45 Cord Set, 1m

文件：235.55 Kbytes Page：1 Pages

Class RK5 600Vac, 70 to 600A Dual-Element, Time-Delay Fuses

文件：289.61 Kbytes Page：2 Pages

Class RK5 600Vac, 70 to 600A Dual-Element, Time-Delay Fuses

文件：289.61 Kbytes Page：2 Pages

Class RK5 600Vac, 70 to 600A Dual-Element, Time-Delay Fuses

文件：289.61 Kbytes Page：2 Pages

R6010230XXYA,Discrete Rectifiers,300 Amperes, 200 Volts,General Purpose / Fast Recovery,Main Applications for General Purpose Rectifiers - battery chargers, induction heating/melting, motor controls, power supplies, transportation, weldingMain Ap

R6010430XXYA,Discrete Rectifiers,300 Amperes, 400 Volts,General Purpose / Fast Recovery,Main Applications for General Purpose Rectifiers - battery chargers, induction heating/melting, motor controls, power supplies, transportation, weldingMain Ap

R6010625XXYA,Discrete Rectifiers,250 Amperes, 600 Volts,General Purpose / Fast Recovery,Main Applications for General Purpose Rectifiers - battery chargers, induction heating/melting, motor controls, power supplies, transportation, weldingMain Ap

丝印代码：TL；Nch 600V 10A Power MOSFET

文件：2.21932 Mbytes Page：14 Pages

isc N-Channel MOSFET Transistor

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Thermal Transfer Print Ribbons

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丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：299.45 Kbytes Page：2 Pages