10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching Structure Silicon N-channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.56Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 600V 10A TO220FM 分立半导体产品 晶体管 - FET，MOSFET - 单个

10V Drive Nch MOSFET

PLUGS AND JACKS

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US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

THE BREAD BOARDING MEDIUM FOR SURFACE MOUNT

[KEYSTONE]

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

IEC Interconnection Cord with IEC Connector C13, V-Lock, straight

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