10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy Applications Switching Structure Silicon N-channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.42Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

10V Drive Nch MOSFET

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

Plunger valve 3/2 way direct-acting

Valve 6012 is a direct-acting plunger valve. The stopper and plunger guide tube are welded together to enhance pressure resistance and leak-tightness. Various seal material combinations are available depending on the application. A Bürkert-specific flange design (SFB) enables space-saving arran

THE BREAD BOARDING MEDIUM FOR SURFACE MOUNT

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PLUGS AND JACKS

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MSD 6LS-2 Ignition Controller for Carbureted and EFI LS 2/LS 7 Engines

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SINGLE POLE, SINGLE THROW DROP-IN/CONNECTORIZED SWITCH MODULES

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