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PD57价格

参考价格：￥44.6756

型号：PD57002-E 品牌：STMicroelectronics 备注：这里有PD57多少钱，2026年最近7天走势，今日出价，今日竞价，PD57批发/采购报价，PD57行情走势销售排行榜，PD57报价。

型号	功能描述	生产厂家企业	LOGO
PD57	PD57/60-x-1076 Hardware Manual Features • Supply Voltage +10. . . +30V DC • Up to 3A RMS motor current • Step and direction interface • microPlyer™ to 256 μ-steps • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling • UART con1guration interfac	TRINAMIC	TRINAMIC
PD57	PD57/60-1276 Hardware Manual Features • PANdrive™ smart motor • Supply Voltag +10 to +30V DC • CAN bus interface • TMCL or CANopen protocol • Integrated sixPoint™ ramp motion controller • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling	TRINAMIC	TRINAMIC
PD57	PD57/60/86-1378 Hardware Manual Features • PANdrive™ smart motor • Supply Voltage +12 to +52V DC • CAN bus interface • TMCL™ or CANopen® protocol • Integrated ramp motion controller with different ramp types • StealthChop™ silent PWM mode • SpreadCycle™ smart mixed decay • StallGuard2™ load detection • CoolStep™ automa	TRINAMIC	TRINAMIC
PD57002	RF POWER TRANSISTORS The LdmoST Plastic FAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57002	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57002-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57002S	RF POWER TRANSISTORS The LdmoST Plastic FAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57002S-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57006	RF POWER TRANSISTORS The LdmoST Plastic FAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57006	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57006-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57006S	RF POWER TRANSISTORS The LdmoST Plastic FAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57006S-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57006STR-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57006TR-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57018	RF POWER TRANSISTORS The LdmoST Plastic FAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57018	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57018-E	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57018S	RF POWER TRANSISTORS The LdmoST Plastic FAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57018S-E	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57018STR-E	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57018TR-E	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030S	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57030S-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030STR-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030TR-E	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045S	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57045S-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045STR-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045TR-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060	RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060S	RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060S	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57060S-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060S-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060STR-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060STR-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060TR-E	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57060TR-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57070-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57070S	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57070S-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57070STR-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57070TR-E	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57-1-1076	PD57/60-x-1076 Hardware Manual Features • Supply Voltage +10. . . +30V DC • Up to 3A RMS motor current • Step and direction interface • microPlyer™ to 256 μ-steps • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling • UART con1guration interfac	TRINAMIC	TRINAMIC
PD57-1-1160	Hardware Version V1.1 HARDWARE MANUAL 1 Features The PANdrive™ PD-1160 is a full mechatronic solution with state of the art feature set. It is highly integrated and offers a convenient handling. The PD-1160 includes a stepper motor, controller/driver electronics, and TRINAMICs sensOstep™ encoder. It can be used in many decentralized	TRINAMIC	TRINAMIC
PD57-1-1160-CANOPEN	Hardware Version V1.1 HARDWARE MANUAL 1 Features The PANdrive™ PD-1160 is a full mechatronic solution with state of the art feature set. It is highly integrated and offers a convenient handling. The PD-1160 includes a stepper motor, controller/driver electronics, and TRINAMICs sensOstep™ encoder. It can be used in many decentralized	TRINAMIC	TRINAMIC
PD57-1-1160-TMCL	Hardware Version V1.1 HARDWARE MANUAL 1 Features The PANdrive™ PD-1160 is a full mechatronic solution with state of the art feature set. It is highly integrated and offers a convenient handling. The PD-1160 includes a stepper motor, controller/driver electronics, and TRINAMICs sensOstep™ encoder. It can be used in many decentralized	TRINAMIC	TRINAMIC
PD57-1-1276	PD57/60-1276 Hardware Manual Features • PANdrive™ smart motor • Supply Voltag +10 to +30V DC • CAN bus interface • TMCL or CANopen protocol • Integrated sixPoint™ ramp motion controller • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling	TRINAMIC	TRINAMIC
PD57-1-1276-CANOPEN	PD57/60-1276 Hardware Manual Features • PANdrive™ smart motor • Supply Voltag +10 to +30V DC • CAN bus interface • TMCL or CANopen protocol • Integrated sixPoint™ ramp motion controller • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling	TRINAMIC	TRINAMIC
PD57-1-1276-TMCL	PD57/60-1276 Hardware Manual Features • PANdrive™ smart motor • Supply Voltag +10 to +30V DC • CAN bus interface • TMCL or CANopen protocol • Integrated sixPoint™ ramp motion controller • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling	TRINAMIC	TRINAMIC
PD57-1-1378	PD57/60/86-1378 Hardware Manual Features • PANdrive™ smart motor • Supply Voltage +12 to +52V DC • CAN bus interface • TMCL™ or CANopen® protocol • Integrated ramp motion controller with different ramp types • StealthChop™ silent PWM mode • SpreadCycle™ smart mixed decay • StallGuard2™ load detection • CoolStep™ automa	TRINAMIC	TRINAMIC
PD57-1-1378-CANOPEN	PD57/60/86-1378 Hardware Manual Features • PANdrive™ smart motor • Supply Voltage +12 to +52V DC • CAN bus interface • TMCL™ or CANopen® protocol • Integrated ramp motion controller with different ramp types • StealthChop™ silent PWM mode • SpreadCycle™ smart mixed decay • StallGuard2™ load detection • CoolStep™ automa	TRINAMIC	TRINAMIC
PD57-1-1378-TMCL	PD57/60/86-1378 Hardware Manual Features • PANdrive™ smart motor • Supply Voltage +12 to +52V DC • CAN bus interface • TMCL™ or CANopen® protocol • Integrated ramp motion controller with different ramp types • StealthChop™ silent PWM mode • SpreadCycle™ smart mixed decay • StallGuard2™ load detection • CoolStep™ automa	TRINAMIC	TRINAMIC
PD57-1160	Hardware Version V1.1 HARDWARE MANUAL 1 Features The PANdrive™ PD-1160 is a full mechatronic solution with state of the art feature set. It is highly integrated and offers a convenient handling. The PD-1160 includes a stepper motor, controller/driver electronics, and TRINAMICs sensOstep™ encoder. It can be used in many decentralized	TRINAMIC	TRINAMIC
PD57-2-1076	PD57/60-x-1076 Hardware Manual Features • Supply Voltage +10. . . +30V DC • Up to 3A RMS motor current • Step and direction interface • microPlyer™ to 256 μ-steps • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling • UART con1guration interfac	TRINAMIC	TRINAMIC

PD57产品属性

类型
描述
型号
PD57
功能描述
Analog IC

PD57供应商更多...

更新时间：2026-3-16 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	PD57-2-1276-CANOPEN	ADI(亚德诺)	25+	N/A	18798	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市润联芯城科技有限公司	PD57002-E	STMicroelectronics	23+	SO-10	50000	只做原装正品	询价
中天科工半导体（深圳）有限公司	PD57060-E	ST/意法	25+	TO-59	32360	ST/意法全新特价PD57060-E即刻询购立享优惠#长期有货	询价
深圳市威雅利发展有限公司	PD57002	ST	12+	SMD	276	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科恒伟业电子有限公司	PD57002	STM	23+	PWRSO-10	6850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市星宇佳科技有限公司	PD57018TR-E	STM	22+	PowerSO-10RF	1800		询价
深圳市鸿昌盛电子科技有限公司	PD57006		25+		10	公司现货库存	询价
深圳市中飞凌科技有限公司	PD57002-E	ST	26+	NA	60000	只有原装可配单	询价
深圳市振宏微科技有限公司	PD57002S-E	ST	23+	原厂封装	13528	振宏微原装正品,假一罚百	询价
深圳市英科美电子有限公司	PD57002	ST/意法	2223+	SMD	26800	只做原装正品假一赔十为客户做到零风险	询价

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