RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：944.64 Kbytes Page：25 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：散装 描述：FET RF 65V 945MHZ PWRSO10 分立半导体产品 晶体管 - FET，MOSFET - 射频

18W 28V HF - 1GHz LDMOS晶体管，PSO-10RF塑料封装

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：944.64 Kbytes Page：25 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2