RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条成形引线） 包装：带 描述：FET RF 65V 945MHZ PWRSO-10 分立半导体产品 晶体管 - FET，MOSFET - 射频

6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：512.2 Kbytes Page：22 Pages

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：512.2 Kbytes Page：22 Pages

Conductive Hinged Box with Foam

文件：123.05 Kbytes Page：1 Pages