RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

30W 28V HF - 1GHz LDMOS晶体管，PSO-10RF塑料封装

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a • Excellent thermal stability \n• Common source configuration \n• POUT = 30 W with 14dB gain @ 945 MHz / 28 V \n• New RF plastic package;

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：506.28 Kbytes Page：18 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：散装 描述：FET RF 65V 945MHZ PWRSO10 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：506.28 Kbytes Page：18 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages

RF POWER TRANSISTORS The LdmoST FAMILY

文件：262.07 Kbytes Page：7 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages