PD57060价格
参考价格：￥280.6388
型号：PD57060-E 品牌：STMicroelectronics 备注：这里有PD57060多少钱，2026年最近7天走势，今日出价，今日竞价，PD57060批发/采购报价，PD57060行情走势销售排行榜，PD57060报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PD57060 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent | STMICROELECTRONICS 意法半导体 |   | |
PD57060 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | STMICROELECTRONICS 意法半导体 | | |
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent | STMICROELECTRONICS 意法半导体 | | ||
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
60W 28V HF - 1GHz LDMOS晶体管，PSO-10RF塑料封装 The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and r • Excellent thermal stability \n• Common source configuration \n• POUT = 60 W with 14.3dB gain@ 945 MHz/28 V \n• New RF plastic package; | STMICROELECTRONICS 意法半导体 | | ||
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, | STMICROELECTRONICS 意法半导体 | | ||
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 65V 945MHZ PWRSO10 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：PowerSO-10 裸露底部焊盘 包装：带 描述：FET RF 65V 945MHZ PWRSO-10 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoSTFAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 | STMICROELECTRONICS 意法半导体 | | ||
RF POWER TRANSISTORS The LdmoSTFAMILY HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 | STMICROELECTRONICS 意法半导体 | |
PD57060产品属性
- 类型
描述
- Package：
PowerSO-10RF (formed lead)
- Marketing Status：
Active
- Grade：
Industrial
- Frequency_nom(MHz)：
945
- Output Power_nom(W)：
60
- Power Gain_nom(dB)：
14.3
- Transistor Supply Voltage_nom(V)：
28
- Efficiency_nom(%)：
54
- R_th(J-C)_max：
1
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
25+ |
N/A |
20948 |
样件支持,可原厂排单订货! |
|||
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST/意法半导体 |
25+ |
10RF-Formed-4 |
20000 |
公司只有正品,实单可谈 |
|||
ST/意法半导体 |
24+ |
10RF-Formed-4 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法 |
25+ |
TO-59 |
32360 |
ST/意法全新特价PD57060-E即刻询购立享优惠#长期有货 |
|||
ST/意法半导体 |
25+ |
10RF-Formed-4 |
12700 |
买原装认准中赛美 |
|||
ST |
23+ |
SMD |
20000 |
||||
ST/意法 |
25+ |
PWRSO10 |
20000 |
原装 |
|||
ST/意法半导体 |
24+ |
10RF-Formed-4 |
16960 |
原装正品现货支持实单 |
|||
ST/意法半导体 |
26+ |
NA |
60000 |
只有原装 可配单 |
PD57060规格书下载地址
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