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PD57060价格
参考价格：￥280.6388
型号：PD57060-E 品牌：STMicroelectronics 备注：这里有PD57060多少钱，2025年最近7天走势，今日出价，今日竞价，PD57060批发/采购报价，PD57060行情走势销售排行榜，PD57060报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PD57060 | RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY DESCRIPTION ThePD57060SisacommonsourceN-Channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57060Sboaststheexcellent | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY DESCRIPTION ThePD57060SisacommonsourceN-Channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57060Sboaststheexcellent | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HFto2000MHzClassABCommonSource-PowerSO-10RF HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowerMOSFET.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesupto1GHz.Thedeviceboaststheexcellentgain, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 65V 945MHZ PWRSO10 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
封装/外壳：PowerSO-10 裸露底部焊盘 包装：带 描述：FET RF 65V 945MHZ PWRSO-10 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
MagnetsandActuators Description Littelfuseoffersawiderangeofmagneticactuatorsthatarepackagedinshapes similartotherelativematingsensors.Wealsoofferalimitedfamilyofbare magnetswithvariousgradesofmaterials,includingferrite(ceramic),AlNiCoand neodymiumironboron(NdFeB)materials. | Littelfuselittelfuse 力特力特公司 |  | | |
200V,N-CHANNEL 文件：107.48 Kbytes Page：8 Pages | IRF International Rectifier |  | |
PD57060产品属性
- 类型
描述
- 型号
PD57060
- 功能描述
射频MOSFET电源晶体管 N-Ch 65 Volt 7.0 Amp
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST |
21+ |
TO-59 |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法半导体 |
21+ |
10RF-Formed-4 |
8860 |
原装现货,实单价优 |
|||
ST/意法 |
21+ |
PWRSO10 |
8000 |
优势供应 实单必成 可开增值税13点 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
ST |
22+ |
SMD |
400 |
只做原装正品假一赔十!正规渠道订货! |
|||
ST/意法半导体 |
21+ |
10RF-Formed-4 |
8860 |
只做原装,质量保证 |
|||
ST |
24+ |
SMD |
11000 |
原装正品 有挂有货 假一赔十 |
|||
ST |
2025+ |
PowerSO-10RF |
16000 |
原装优势绝对有货 |
|||
ST |
24+ |
SMD |
5000 |
全新原装正品,现货销售 |
PD57060芯片相关品牌
PD57060规格书下载地址
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