RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode a

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：374.07 Kbytes Page：23 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR） 描述：FET RF 65V 960MHZ PWRSO10 分立半导体产品 晶体管 - FET，MOSFET - 射频

2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：374.07 Kbytes Page：23 Pages

Conductive Hinged Box with Foam

文件：123.05 Kbytes Page：1 Pages