40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged

丝印代码：M2；40 V low VCEsat NPN/PNP transistor

FEATURES •600 mW total power dissipation •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replaces two SOT23 packaged low VCEsat transistors on same PCB area •Reduces required PCB area •Reduced pick and place cos

40 V low VCEsat NPN/PNP transistor

NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. • 600 mW total power dissipation\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replaces two SOT23 packaged low VCEsat transistors on same PCB area\n• Reduces required PCB area\n• Reduced pick and place costs\n•;

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High PC, low VCE(sat), high current switching. Applications Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits.

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5140S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat gener

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

丝印代码：414S；NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

丝印代码：4140SW；NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

30 V Low VCE(sat) NPN Transistor

FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, v

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

40 V, 1A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting •

丝印代码：ZT；40 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T. 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation 3. Applications • Ge

40 V, 1A NPN low VCEsat (BISS) transistor

40 V, 1A NPN low VCEsat (BISS) transistor

丝印代码：ZT；40 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T-Q. 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation • Qualified according

丝印代码：ZT；40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

丝印代码：41t；40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capabilities. •Improved device reliability due to reduced heat generation. •Enhanced performance over SOT231A general purpose packaged transistors. APPLICATIONS •General purpose switching and muting •LCD backlighting •Suppl

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT323 plastic package. PNP complement: PBSS5140U. FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. • Enhanced performance over SOT231A general purpose pa

丝印代码：22；40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Excellent coplanarit

丝印代码：22；40 V low VCEsat NPN transistor

FEATURES •300 mW total power dissipation •Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package •Improved thermal behaviour due to flat leads •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capabilities •Reduced required PCB area. AP

丝印代码：22；40 V low VCEsat NPN transistor

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

40 V low VCEsat NPN/PNP transistor

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双极晶体管

General purpose and low VCEsat bipolar transistors

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 1A NPN low VCEsat (BISS) transistor

文件：275.76 Kbytes Page：9 Pages

40 V low VCEsat NPN transistor

文件：283.15 Kbytes Page：8 Pages

0.5W AF Power Amplifier

2-CHANNEL AF POWER AMP. FOR TAPE RECORDER, RADIO 0.5W TYP AF POWER AMP. FOR RADIO OR TAPE RECORDER 0.6 TO 0.9W AF POWER AMP.

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Low Power Two-Wire Ground Fault Interrupter Controller

Description The RV4140A is a low power controller for AC outlet appliance leakage circuit interrupters. These devices detect hazardous current paths to ground such as an appliance falling into water. The interrupter then open circuits the line before a harmful or lethal shock occurs. Features •

Photo Modules for PCM Remote Control Systems

DESCRIPTION These products are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the epoxy package contains an IR filter. The demodulated output signal can be directly connected to a microprocessor for decoding. FEATURES •