40 V, 1A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting •

40 V, 1A NPN low VCEsat (BISS) transistor

30 V Low VCE(sat) NPN Transistor

FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, v

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

40 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T. 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation 3. Applications • Ge

双极晶体管

NPN Transistor

NPN小信号三极管

Low VCEsat (BISS) transistors

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40 V, 1A NPN low VCEsat (BISS) transistor

40 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T-Q. 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation • Qualified according

40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 1A NPN low VCEsat (BISS) transistor

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