DESCRIPTION

NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V.

FEATURES

• 300 mW total power dissipation

• Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package

• Improved thermal behaviour due to flat leads

• Excellent coplanarity due to straight leads

• Low collector-emitter saturation voltage

• High current capabilities

• Reduced required PCB area.

APPLICATIONS

• General purpose switching and muting

• LCD backlighting

• Supply line switching circuits

• Battery driven equipment (mobile phones, video cameras and hand-held devices).