40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5140S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat gener

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High PC, low VCE(sat), high current switching. Applications Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits.

40 V low VCEsat NPN transistor

双极晶体管

General purpose and low VCEsat bipolar transistors

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

丝印代码：414S；NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

丝印代码：4140SW；NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 40V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

0.5W AF Power Amplifier

2-CHANNEL AF POWER AMP. FOR TAPE RECORDER, RADIO 0.5W TYP AF POWER AMP. FOR RADIO OR TAPE RECORDER 0.6 TO 0.9W AF POWER AMP.

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Low Power Two-Wire Ground Fault Interrupter Controller

Description The RV4140A is a low power controller for AC outlet appliance leakage circuit interrupters. These devices detect hazardous current paths to ground such as an appliance falling into water. The interrupter then open circuits the line before a harmful or lethal shock occurs. Features •

Photo Modules for PCM Remote Control Systems

DESCRIPTION These products are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the epoxy package contains an IR filter. The demodulated output signal can be directly connected to a microprocessor for decoding. FEATURES •