FEATURES

•300 mW total power dissipation

•Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package

•Improved thermal behaviour due to flat leads

•Excellent coplanarity due to straight leads

•Low collector-emitter saturation voltage

•High current capabilities

•Reduced required PCB area.

APPLICATIONS

•General purpose switching and muting

•LCD backlighting

•Supply line switching circuits

•Battery driven equipment (mobile phones, video cameras and hand-held devices).

DESCRIPTION

NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V.