40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Excellent coplanarit

40 V low VCEsat NPN transistor

40 V low VCEsat NPN transistor

FEATURES •300 mW total power dissipation •Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package •Improved thermal behaviour due to flat leads •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capabilities •Reduced required PCB area. AP

40 V low VCEsat NPN transistor

40 V low VCEsat NPN transistor

封装/外壳：SOT-563，SOT-666 包装：散装 描述：TRANS NPN 40V 1A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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