High Output Current Operational Amplifier

GENERAL DESCRIPTION The OP-50 eliminates the need for an output buffer in applications which require high load driving capability coupled with premium amplifier performance. The output state can drive ±50mA into 50Ω loads. In addition, the output is stable with capacitive load of up 10nF.

包装：散装 描述：(OP) OP50, PAD, 30\ 工具 配件

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package

Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

NPN SILICON PHOTOTRANSISTOR

Description The OP505W consist of NPN silicon phototransistors molded in blue tinted plastic packages. The wide receiving angle provides relatively even reception over a large area. This device is 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

NPN SILICON PHOTOTRANSISTORS

NPN SILICON PHOTOTRANSISTORS

NPN SILICON PHOTOTRANSISTORS

NPN SILICON PHOTOTRANSISTORS

NPN Silicon Phototransistor

Description The OP506W consists of an NPN silicon phototransistor molded in a blue tinted plastic package. The wide receiving angle provides relatively even reception over a large area. This device is 100 production tested using infrared light for clse correlation with OPteks GaAs and GaAlAs emit

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistors

Description The OP508F series consists of NPN silicon phototransistor molded in flat, black plastic, end looking packages. The flat sensing surface allows an acceptance half angle 60° measured from the optical axis to the half power point. The black plastic package significantly reduces ambient l

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN Silicon Phototransistors

Description The OP508F series consists of NPN silicon phototransistor molded in flat, black plastic, end looking packages. The flat sensing surface allows an acceptance half angle 60° measured from the optical axis to the half power point. The black plastic package significantly reduces ambient l

NPN Silicon Phototransistors

Description The OP508F series consists of NPN silicon phototransistor molded in flat, black plastic, end looking packages. The flat sensing surface allows an acceptance half angle 60° measured from the optical axis to the half power point. The black plastic package significantly reduces ambient l

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN SILICON PHOTOTRANSISTORS

NPN Silicon Phototransistors

Descripton: The OP509F series consists of a NPN silicon phototransistor mounted in lensed, clear plastic end looking packages. Features: • Lensed for high sensitvity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package • Mechanically and spectrally matched to th

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN Silicon Phototransistors

Descripton: The OP509F series consists of a NPN silicon phototransistor mounted in lensed, clear plastic end looking packages. Features: • Lensed for high sensitvity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package • Mechanically and spectrally matched to th

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN Silicon Phototransistors

Descripton: The OP509F series consists of a NPN silicon phototransistor mounted in lensed, clear plastic end looking packages. Features: • Lensed for high sensitvity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package • Mechanically and spectrally matched to th

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN SILICON PHOTOTRANSISTORS

NPN SILICON PHOTOTRANSISTORS

封装/外壳：0805（2012 公制） 包装：散装 描述：SENSOR PHOTO 935NM TOP VIEW 0805 传感器，变送器 光学传感器 - 光电晶体管

Infrared selected NPN silicon phototransistor.

NPN silicon phototransistor

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

Phototransistor

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages