NPN Silicon Phototransistors

Description The OP508F series consists of NPN silicon phototransistor molded in flat, black plastic, end looking packages. The flat sensing surface allows an acceptance half angle 60° measured from the optical axis to the half power point. The black plastic package significantly reduces ambient l

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

封装/外壳：径向 包装：散装 描述：SENSOR PHOTO 890NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

Phototransistor

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and